Responsible for developing devices or modules involved in novel CMOS solutions for the future generations of DRAM and emerging memories necessary to meet the required array efficiency and data rate requirements as well as the product cadence timelines. Responsibilities will include, but not limited to: Contribute to the device technology development of state-of-the-art CMOS providing solutions that are compatible with the memory architecture. Perform electrical characterization of CMOS devices and CMOS circuits to identify device improvement directions. Develop the fundamental understanding of the CMOS technology and its impact on overall product figures of merit. Participate in a multi team efforts across Design, TCAD and modelling groups. Provide insights and guidance to the management team on topics involving CMOS. PhD or Master's degree in Electrical Engineering or equivalent with advanced CMOS experience, additional experience with DRAM a plus Semiconductor industry experience is preferred, ideally in a top tier logic or DRAM company Strong understanding of semiconductor devices, processes and characterization techniques is required Understanding and experience with high performance logic technologies (14nm and beyond) is preferred Hands on experience with data analysis, device characterization and process integration is essential Outstanding communication skills both written and verbal Strong record of planning and completion of complex projects
