Senior Principal FET Modeling Engineer for MMICs
Raytheon Technologies
- Andover, MA
- Permanent
- Full-time
- Research and Development of advanced models for MMIC design using GaAs and GaN technologies, to accurately predict the static and dynamic behavior of currents and charges from DC to mm-Wave frequencies, including technology-inherent phenomena (e.g. traps, noise, statistics, linearity), as well as the electro-thermal environment.
- Develop design methodologies for high-performing PA, LNA, linear amplifiers, RF front-ends, and T/R chips (including RF switches and digital circuits), to optimize the performance and ensure circuit stability at the same time.
- Guide the MMIC design teams in performing accurate and efficient simulations of MMICs and modules and establish best-practices for MMIC design.
- Advance Foundry Services in collaboration with process, CAD, and EDA engineers and develop, test, document, and release MMIC PDKs in Keysight ADS.
- Develop and execute device characterization test plans including static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
- Assisting device and process engineers with analysis of test data and semiconductor simulation (e.g. TCAD).
- Typically requires a Bachelor’s in Science, Technology, Engineering, or Mathematics (STEM) and 10 years of prior relevant work experience OR an advanced STEM degree and 7 years of prior relevant work experience.
- Experience with RF/microwave engineering and/or semiconductor device physics
- Experience with RF device/circuit simulation and tools
- Experience with semiconductor device characterization such as static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and/or noise measurements
- The ability to obtain and maintain a U.S. government issued security clearance is required. U.S. citizenship is required, as only U.S. citizens are eligible for a security clearance.
- MS or PhD degree in Electrical Engineering with emphasis on RF/microwave engineering.
- Experience with semiconductor device physics concepts with emphasis on III-Vcompound semiconductor HEMTs
- Non-linear compact modeling experience, incl. parameter extraction and validation techniques; Experience with field effect transistor models such as MVSG, ASM-HEMT, Angelov, EEHEMT, PSP, BSIM4, etc.
- Hands-on experience with high-frequency (microwave/millimeterwave) and large-signal/high power test equipment such as Keysight or Anteverta NVNAs
- Experience with statistical analyses and programming (e.g Java, Python, Verilog-A)
- Experience with semiconductor and multi-physics simulations especially for electromagnetic and electro-thermal analysis
- Design experience with power amplifiers, low-noise amplifiers, high power switches/limiters, and related circuits
- Experience using Keysight Advanced Design Systems and Cadence Virtuoso integrated circuit design platforms (schematic capture, layout, verification, data visualization, and simulation engines)