Senior Principal FET Modeling Engineer for MMICs

Raytheon Technologies

  • Andover, MA
  • Permanent
  • Full-time
  • 2 months ago
Date Posted: 2024-01-30Country: United States of AmericaLocation: MA112: Andover MA 358 Lowell St Dukes 358 Lowell Street Dukes, Andover, MA, 01810 USAPosition Role Type: HybridAbout Us:At Raytheon, the foundation of everything we do is rooted in our values and a higher calling – to help our nation and allies defend freedoms and deter aggression. We bring the strength of more than 100 years of experience and renowned engineering expertise to meet the needs of today’s mission and stay ahead of tomorrow’s threat. Our team solves tough, meaningful problems that create a safer, more secure world.Job Summary:An exciting opportunity exists at Raytheon for a Sr Principal Microwave/MMIC Device Modeling Engineer to join our fast-paced MMIC Foundry Section within the Advanced Microelectronics Solutions (AMS) Department.AMS designs, develops, and manufactures compound semiconductor devices, microwave/millimeter-wave integrated circuits, and modules for defense applications. In this role you will work with our advanced GaN and GaAs technologies, you will be responsible for the generation of active and passive compact circuit simulation models to support the development of products fabricated in our III-V semiconductor foundry. These models will be used by our MMIC design teams across Raytheon to create Monolithic Microwave Integrated Circuits (MMICs) for use in advanced defense electronic systems.We value diverse skills and experience, so don’t hold back. Your qualification could add tremendous value to our team. Our customers come from all different backgrounds, and so do our employees. If you’re passionate about what you could accomplish here, we’d love to hear from you.Responsibilities to Anticipate:
  • Research and Development of advanced models for MMIC design using GaAs and GaN technologies, to accurately predict the static and dynamic behavior of currents and charges from DC to mm-Wave frequencies, including technology-inherent phenomena (e.g. traps, noise, statistics, linearity), as well as the electro-thermal environment.
  • Develop design methodologies for high-performing PA, LNA, linear amplifiers, RF front-ends, and T/R chips (including RF switches and digital circuits), to optimize the performance and ensure circuit stability at the same time.
  • Guide the MMIC design teams in performing accurate and efficient simulations of MMICs and modules and establish best-practices for MMIC design.
  • Advance Foundry Services in collaboration with process, CAD, and EDA engineers and develop, test, document, and release MMIC PDKs in Keysight ADS.
  • Develop and execute device characterization test plans including static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
  • Assisting device and process engineers with analysis of test data and semiconductor simulation (e.g. TCAD).
​This position is a hybrid role, and the selected applicant will work with the hiring manager to set schedule.Basic Qualifications:
  • Typically requires a Bachelor’s in Science, Technology, Engineering, or Mathematics (STEM) and 10 years of prior relevant work experience OR an advanced STEM degree and 7 years of prior relevant work experience.
  • Experience with RF/microwave engineering and/or semiconductor device physics
  • Experience with RF device/circuit simulation and tools
  • Experience with semiconductor device characterization such as static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and/or noise measurements
  • The ability to obtain and maintain a U.S. government issued security clearance is required. U.S. citizenship is required, as only U.S. citizens are eligible for a security clearance.
Preferred Qualifications :
  • MS or PhD degree in Electrical Engineering with emphasis on RF/microwave engineering.
  • Experience with semiconductor device physics concepts with emphasis on III-Vcompound semiconductor HEMTs
  • Non-linear compact modeling experience, incl. parameter extraction and validation techniques; Experience with field effect transistor models such as MVSG, ASM-HEMT, Angelov, EEHEMT, PSP, BSIM4, etc.
  • Hands-on experience with high-frequency (microwave/millimeterwave) and large-signal/high power test equipment such as Keysight or Anteverta NVNAs
  • Experience with statistical analyses and programming (e.g Java, Python, Verilog-A)
  • Experience with semiconductor and multi-physics simulations especially for electromagnetic and electro-thermal analysis
  • Design experience with power amplifiers, low-noise amplifiers, high power switches/limiters, and related circuits
  • Experience using Keysight Advanced Design Systems and Cadence Virtuoso integrated circuit design platforms (schematic capture, layout, verification, data visualization, and simulation engines)
What We Offer:Whether you’re just starting out on your career journey or are an experienced professional, we offer a robust total rewards package that goes above and beyond with compensation; healthcare, wellness, retirement and work/life benefits; career development and recognition programs. Some of the superior benefits we offer include parental (including paternal) leave, flexible work schedules, achievement awards, educational assistance and child/adult backup care.The salary range for this role is 118,000 USD - 246,000 USD. The salary range provided is a good faith estimate representative of all experience levels. RTX considers several factors when extending an offer, including but not limited to, the role, function and associated responsibilities, a candidate’s work experience, location, education/training, and key skills.Hired applicants may be eligible for benefits, including but not limited to, medical, dental, vision, life insurance, short-term disability, long-term disability, 401(k) match, flexible spending accounts, flexible work schedules, employee assistance program, Employee Scholar Program, parental leave, paid time off, and holidays. Specific benefits are dependent upon the specific business unit as well as whether or not the position is covered by a collective-bargaining agreement.Hired applicants may be eligible for annual short-term and/or long-term incentive compensation programs depending on the level of the position and whether or not it is covered by a collective-bargaining agreement. Payments under these annual programs are not guaranteed and are dependent upon a variety of factors including, but not limited to, individual performance, business unit performance, and/or the company’s performance.This role is a U.S.-based role. If the successful candidate resides in a U.S. territory, the appropriate pay structure and benefits will apply.RTX anticipates the application window closing approximately 40 days from the date the notice was posted. However, factors such as candidate flow and business necessity may require RTX to shorten or extend the application window.RTX is An Equal Opportunity/Affirmative Action Employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability or veteran status, age or any other federally protected class.Privacy Policy and Terms:Click on this to read the Policy and Terms

Raytheon Technologies